收藏本站
W631GG6KB
The MRS command to Non-MRS command delay, t MOD is required for the DRAM to update the
features, except DLL reset, and is the minimum time required from a MRS command to a non-MRS
command excluding NOP and DES shown in Figure 4.
T0
T1
T2
Ta0
Ta1
Ta2
Ta3
Ta4
Tb0
Tb1
Tb2
CK#
CK
Command
Address
VALID
VALID
VALID
VALID
VALID
VALID
MRS
VALID
NOP/DES
VALID
NOP/DES
VALID
NOP/DES
VALID
NOP/DES
VALID
NOP/DES
VALID
VALID
VALID
VALID
VALID
CKE
Settings
Old settings
Rtt_Nom ENABLED prior and/or after MRS command
Updating Settings
t MOD
New Settings
ODT
VALID
VALID
ODTLoff+1
VALID
Rtt_Nom DISABLED prior and/or after MRS command
ODT
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
TIME BREAK
DON'T CARE
Figure 4 – t MOD Timing
The mode register contents can be changed using the same command and timing requirements
during normal operation as long as the DRAM is in idle state, i.e., all banks are in the precharged state
with t RP satisfied, all data bursts are completed and CKE is high prior to writing into the mode register.
If the Rtt_Nom Feature is enabled in the Mode Register prior and/or after a MRS command, the ODT
signal must continuously be registered LOW ensuring R TT is in an off state prior to the MRS
command. The ODT signal may be registered high after t MOD has expired. If the Rtt_Nom feature is
disabled in the Mode Register prior and after a MRS command, the ODT signal can be registered
either LOW or HIGH before, during and after the MRS command. The mode registers are divided into
various fields depending on the functionality and/or modes.
Publication Release Date: Dec. 09, 2013
Revision A05
- 16 -
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
W9412G6IH-5 IC DDR-400 SDRAM 128MB 66TSSOPII
W9412G6JH-5I IC DDR SDRAM 128MBIT 66TSOPII
W9425G6EH-5 IC DDR-400 SDRAM 256MB 66TSSOPII
W9425G6JH-5I IC DDR SDRAM 256MBIT 66TSOPII
W947D2HBJX5E IC LPDDR SDRAM 128MBIT 90VFBGA
W948D2FBJX5E IC LPDDR SDRAM 256MBIT 90VFBGA
W949D2CBJX5E IC LPDDR SDRAM 512MBIT 90VFBGA
W971GG6JB25I IC DDR2 SDRAM 1GBIT 84WBGA
相关代理商/技术参数
W631GG8KB-11 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W631GG8KB-12 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR3 SDRAM 1G-Bit 128Mx8 1.5V 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W631GG8KB-15 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W632 制造商:LUMINIS 制造商全称:LUMINIS 功能描述:Wall mount
W632GG6KB-11 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 2GBIT 96WBGA
W632GG8KB-11 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 2GBIT 78WBGA
W634 制造商:LUMINIS 制造商全称:LUMINIS 功能描述:Wall mount
W638 制造商:LUMINIS 制造商全称:LUMINIS 功能描述:Wall mount